BCX71

BCX71, BCX71G, BCX71GE6327, BCX71H,215, BCX71H,235, BCX71HE6327, BCX71J, BCX71J,215, BCX71J,235, BCX71J_D87Z, BCX71JE6327, BCX71JE6433, BCX71JLT1, BCX71JLT1G, BCX71JT116, BCX71K, BCX71K,215, BCX71K,235, BCX71K_D87Z, BCX71KE6327, BCX71KTA

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Description

Parameters

ParameterBCX71GBCX71GE6327BCX71H,215BCX71H,235BCX71HE6327BCX71JBCX71J,215BCX71J,235BCX71J_D87ZBCX71JE6327BCX71JE6433BCX71JLT1BCX71JLT1GBCX71JT116BCX71KBCX71K,215BCX71K,235BCX71K_D87ZBCX71KE6327BCX71KTA
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Fairchild SemiconductorInfineon TechnologiesNXP SemiconductorsNXP SemiconductorsInfineon TechnologiesFairchild SemiconductorNXP SemiconductorsNXP SemiconductorsFairchild SemiconductorInfineon TechnologiesInfineon TechnologiesON SemiconductorON SemiconductorRohm SemiconductorFairchild SemiconductorNXP SemiconductorsNXP SemiconductorsFairchild SemiconductorInfineon TechnologiesDiodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<200 mA<500 mA<100 mA<100 mA<500 mA<100 mA<200 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Constant power dissipated on the transistor collector
PC
<350 mW<330 mW<250 mW<250 mW<330 mW<350 mW<250 mW<250 mW<350 mW<330 mW<330 mW<350 mW<350 mW(not set)<350 mW<250 mW<250 mW<350 mW<330 mW<330 mW
Static current transfer coefficient of bipolar transistor
hFE
>120Ic, Vce = 2mA, 5V>20Ic, Vce = 10µA, 5V>180Ic, Vce = 2mA, 5V>180Ic, Vce = 2mA, 5V>30Ic, Vce = 10µA, 5V>250Ic, Vce = 2mA, 5V>250Ic, Vce = 2mA, 5V>250Ic, Vce = 2mA, 5V>250Ic, Vce = 2mA, 5V>40Ic, Vce = 10µA, 5V>40Ic, Vce = 10µA, 5V>250Ic, Vce = 2mA, 5V>40Ic, Vce = 10µA, 5V>250Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<550 mVIb, Ic = 1.25mA, 50mA<250 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<550 mVIb, Ic = 1.25mA, 50mA<250 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<550 mVIb, Ic = 1.25mA, 50mA<250 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<550 mVIb, Ic = 1.25mA, 50mA(not set)<550 mVIb, Ic = 1.25mA, 50mA<250 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<550 mVIb, Ic = 1.25mA, 50mA<250 mVIb, Ic = 250µA, 10mA<550 mVIb, Ic = 1.25mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
(not set)<250 MHz<100 MHz<100 MHz<250 MHz(not set)<100 MHz<100 MHz(not set)<250 MHz<250 MHz(not set)(not set)<180 MHz(not set)<100 MHz<100 MHz(not set)<250 MHz<180 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
<20 nA(not set)(not set)(not set)(not set)<20 nA(not set)(not set)<20 nA(not set)(not set)<20 nA<20 nA(not set)<20 nA(not set)(not set)<20 nA(not set)<20 nA