BCX52-10,115

BCX52, BCX52-10,115, BCX52,115, BCX52-16,115, BCX52-16,135, BCX52-16E6327, BCX52-16E6433, BCX52E6327

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Description

Parameters

ParameterBCX52-10,115BCX52,115BCX52-16,115BCX52-16,135BCX52-16E6327BCX52-16E6433BCX52E6327
IC package
Package
SC-62, SOT-89, MPT3 (3 leads + Tab)SC-62, SOT-89, MPT3 (3 leads + Tab)SC-62, SOT-89, MPT3 (3 leads + Tab)SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-89SOT-89SOT-89
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<650 mW<650 mW<650 mW<1.3 W<1 W<2 W<1 W
Static current transfer coefficient of bipolar transistor
hFE
>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<145 MHz<145 MHz<145 MHz<145 MHz<125 MHz<125 MHz<125 MHz
Bipolar transistor structure
Structure
PNP