BCW72,215

BCW72, BCW72,215, BCW72,235, BCW72LT1, BCW72LT1G, BCW72T116

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Description

Parameters

ParameterBCW72,215BCW72,235BCW72LT1BCW72LT1GBCW72T116
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsON SemiconductorON SemiconductorRohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Constant power dissipated on the transistor collector
PC
<250 mW<250 mW<225 mW<225 mW(not set)
Static current transfer coefficient of bipolar transistor
hFE
>150Ic, Vce = 10µA, 5V>150Ic, Vce = 10µA, 5V>200Ic, Vce = 2mA, 5V>200Ic, Vce = 2mA, 5V>200Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 500µA, 10mA<250 mVIb, Ic = 500µA, 10mA<250 mVIb, Ic = 500µA, 10mA<250 mVIb, Ic = 500µA, 10mA(not set)
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz<100 MHz<300 MHz<300 MHz(not set)
Bipolar transistor structure
Structure
NPN