BCW68

BCW68, BCW68FE6327, BCW68G, BCW68GE6327, BCW68GLT1G, BCW68GLT3G, BCW68HE6327, BCW68HTA, BCW68HTC

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Description

Parameters

ParameterBCW68FE6327BCW68GBCW68GE6327BCW68GLT1GBCW68GLT3GBCW68HE6327BCW68HTABCW68HTC
IC package
Package
SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Infineon TechnologiesFairchild SemiconductorInfineon TechnologiesON SemiconductorON SemiconductorInfineon TechnologiesDiodes/ZetexDiodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<800 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Constant power dissipated on the transistor collector
PC
<330 mW<350 mW<330 mW<225 mW<225 mW<330 mW<330 mW<330 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>120Ic, Vce = 10mA, 1V>120Ic, Vce = 10mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 10mA, 100mA<1.5 VIb, Ic = 30mA, 300mA<300 mVIb, Ic = 10mA, 100mA<1.5 VIb, Ic = 30mA, 300mA<1.5 VIb, Ic = 30mA, 300mA<300 mVIb, Ic = 10mA, 100mA<300 mVIb, Ic = 10mA, 100mA<300 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz<100 MHz<200 MHz<100 MHz<100 MHz<200 MHz<100 MHz<100 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
(not set)<20 nA(not set)<20 nA<20 nA(not set)<20 nA<20 nA