BCW67AE6327

BCW67, BCW67AE6327, BCW67BE6327, BCW67CE6327, BCW67CTA

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Description

Parameters

ParameterBCW67AE6327BCW67BE6327BCW67CE6327BCW67CTA
IC package
Package
SOT-23SOT-23SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Infineon TechnologiesInfineon TechnologiesInfineon TechnologiesDiodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<800 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<32 V
Constant power dissipated on the transistor collector
PC
<330 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<300 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz<200 MHz<200 MHz<100 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
(not set)(not set)(not set)<20 nA