BCW66G

BCW66, BCW66FE6327, BCW66G, BCW66G_D87Z, BCW66GE6327, BCW66GLT1, BCW66GLT1G, BCW66GLT3G, BCW66HB6327, BCW66HE6327, BCW66HTA, BCW66HTC, BCW66KFE6327, BCW66KGE6327, BCW66KGE6433, BCW66KHB6327, BCW66KHE6327

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Description

Parameters

Parameter		BCW66FE6327	BCW66G	BCW66G_D87Z	BCW66GE6327	BCW66GLT1	BCW66GLT1G	BCW66GLT3G	BCW66HB6327	BCW66HE6327	BCW66HTA	BCW66HTC	BCW66KFE6327	BCW66KGE6327	BCW66KGE6433	BCW66KHB6327	BCW66KHE6327
IC package	Package	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
Manufacturer	Manufacturer	Infineon Technologies	Fairchild Semiconductor	Fairchild Semiconductor	Infineon Technologies	ON Semiconductor	ON Semiconductor	ON Semiconductor	Infineon Technologies	Infineon Technologies	Diodes/Zetex	Diodes/Zetex	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<800 mA	<1 A	<1 A	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<45 V
Constant power dissipated on the transistor collector	P_C	<330 mW	<350 mW	<350 mW	<330 mW	<225 mW	<225 mW	<225 mW	<330 mW	<330 mW	<330 mW	<330 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW
Static current transfer coefficient of bipolar transistor	hFE	>100Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>100Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<300 mVIb, Ic = 10mA, 100mA	<700 mVIb, Ic = 50mA, 500mA	<700 mVIb, Ic = 50mA, 500mA	<300 mVIb, Ic = 10mA, 100mA	<700 mVIb, Ic = 50mA, 500mA	<700 mVIb, Ic = 50mA, 500mA	<700 mVIb, Ic = 50mA, 500mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<170 MHz	<100 MHz	<100 MHz	<170 MHz	<100 MHz	<100 MHz	<100 MHz	<170 MHz	<170 MHz	<100 MHz	<100 MHz	<170 MHz	<170 MHz	<170 MHz	<170 MHz	<170 MHz
Bipolar transistor structure	Structure	NPN
Collector cutoff current	I_frc	(not set)	<20 nA	<20 nA	(not set)	<20 nA	<20 nA	<20 nA	(not set)	(not set)	<20 nA	<20 nA	(not set)	(not set)	(not set)	(not set)	(not set)