BCW66FE6327

BCW66, BCW66FE6327, BCW66G, BCW66G_D87Z, BCW66GE6327, BCW66GLT1, BCW66GLT1G, BCW66GLT3G, BCW66HB6327, BCW66HE6327, BCW66HTA, BCW66HTC, BCW66KFE6327, BCW66KGE6327, BCW66KGE6433, BCW66KHB6327, BCW66KHE6327

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		BCW66FE6327	BCW66G	BCW66G_D87Z	BCW66GE6327	BCW66GLT1	BCW66GLT1G	BCW66GLT3G	BCW66HB6327	BCW66HE6327	BCW66HTA	BCW66HTC	BCW66KFE6327	BCW66KGE6327	BCW66KGE6433	BCW66KHB6327	BCW66KHE6327
IC package	Package	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
Manufacturer	Manufacturer	Infineon Technologies	Fairchild Semiconductor	Fairchild Semiconductor	Infineon Technologies	ON Semiconductor	ON Semiconductor	ON Semiconductor	Infineon Technologies	Infineon Technologies	Diodes/Zetex	Diodes/Zetex	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<800 mA	<1 A	<1 A	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA	<800 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<45 V
Constant power dissipated on the transistor collector	P_C	<330 mW	<350 mW	<350 mW	<330 mW	<225 mW	<225 mW	<225 mW	<330 mW	<330 mW	<330 mW	<330 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW
Static current transfer coefficient of bipolar transistor	hFE	>100Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>100Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>160Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V	>250Ic, Vce = 100mA, 1V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<300 mVIb, Ic = 10mA, 100mA	<700 mVIb, Ic = 50mA, 500mA	<700 mVIb, Ic = 50mA, 500mA	<300 mVIb, Ic = 10mA, 100mA	<700 mVIb, Ic = 50mA, 500mA	<700 mVIb, Ic = 50mA, 500mA	<700 mVIb, Ic = 50mA, 500mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA	<300 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<170 MHz	<100 MHz	<100 MHz	<170 MHz	<100 MHz	<100 MHz	<100 MHz	<170 MHz	<170 MHz	<100 MHz	<100 MHz	<170 MHz	<170 MHz	<170 MHz	<170 MHz	<170 MHz
Bipolar transistor structure	Structure	NPN
Collector cutoff current	I_frc	(not set)	<20 nA	<20 nA	(not set)	<20 nA	<20 nA	<20 nA	(not set)	(not set)	<20 nA	<20 nA	(not set)	(not set)	(not set)	(not set)	(not set)