BCW65ALT1

BCW65, BCW65ALT1, BCW65ALT1G, BCW65CLT1, BCW65CLT1G, BCW65CTA

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Description

Parameters

ParameterBCW65ALT1BCW65ALT1GBCW65CLT1BCW65CLT1GBCW65CTA
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorON SemiconductorON SemiconductorDiodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<800 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<32 V
Constant power dissipated on the transistor collector
PC
<225 mW<300 mW<225 mW<300 mW<330 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 100mA, 1V>35Ic, Vce = 100µA, 10V>250Ic, Vce = 100mA, 1V>80Ic, Vce = 100µA, 10V>250Ic, Vce = 100mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<700 mVIb, Ic = 50mA, 500mA<700 mVIb, Ic = 50mA, 500mA<700 mVIb, Ic = 50mA, 500mA<700 mVIb, Ic = 50mA, 500mA<300 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
<20 nA