BCW60A

BCW60, BCW60A, BCW60A_D87Z, BCW60B, BCW60B,215, BCW60B,235, BCW60BE6327, BCW60C, BCW60C,215, BCW60C,235, BCW60CE6327, BCW60CT116, BCW60D, BCW60D,215, BCW60D,235, BCW60DE6327, BCW60DT116, BCW60DTA, BCW60FFE6327

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Description

Parameters

ParameterBCW60ABCW60A_D87ZBCW60BBCW60B,215BCW60B,235BCW60BE6327BCW60CBCW60C,215BCW60C,235BCW60CE6327BCW60CT116BCW60DBCW60D,215BCW60D,235BCW60DE6327BCW60DT116BCW60DTABCW60FFE6327
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23
Manufacturer
Manufacturer
Fairchild SemiconductorFairchild SemiconductorFairchild SemiconductorNXP SemiconductorsNXP SemiconductorsInfineon TechnologiesFairchild SemiconductorNXP SemiconductorsNXP SemiconductorsInfineon TechnologiesRohm SemiconductorFairchild SemiconductorNXP SemiconductorsNXP SemiconductorsInfineon TechnologiesRohm SemiconductorDiodes/ZetexInfineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<100 mA<200 mA<100 mA<100 mA<100 mA<100 mA<200 mA<200 mA<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<32 V
Constant power dissipated on the transistor collector
PC
<350 mW<350 mW<350 mW<250 mW<250 mW<330 mW<350 mW<250 mW<250 mW<330 mW(not set)<350 mW<250 mW<250 mW<330 mW(not set)<330 mW<330 mW
Static current transfer coefficient of bipolar transistor
hFE
>120Ic, Vce = 2mA, 5V>120Ic, Vce = 2mA, 5V>180Ic, Vce = 2mA, 5V>20Ic, Vce = 10µA, 5V>20Ic, Vce = 10µA, 5V>20Ic, Vce = 10µA, 5V>250Ic, Vce = 2mA, 5V>40Ic, Vce = 10µA, 5V>40Ic, Vce = 10µA, 5V>40Ic, Vce = 10µA, 5V>260Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V>100Ic, Vce = 10µA, 5V>100Ic, Vce = 10µA, 5V>100Ic, Vce = 10µA, 5V>380Ic, Vce = 2mA, 5V>380Ic, Vce = 2mA, 5V>40Ic, Vce = 10µA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<550 mVIb, Ic = 1.25mA, 50mA<550 mVIb, Ic = 1.25mA, 50mA<550 mVIb, Ic = 1.25mA, 50mA<350 mVIb, Ic = 250µA, 10mA<350 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA<550 mVIb, Ic = 1.25mA, 50mA<350 mVIb, Ic = 250µA, 10mA<350 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA(not set)<550 mVIb, Ic = 1.25mA, 50mA<350 mVIb, Ic = 250µA, 10mA<350 mVIb, Ic = 250µA, 10mA<250 mVIb, Ic = 250µA, 10mA(not set)<550 mVIb, Ic = 1.25mA, 50mA<250 mVIb, Ic = 250µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<125 MHz<125 MHz<125 MHz<250 MHz<250 MHz<250 MHz<125 MHz<250 MHz<250 MHz<250 MHz<125 MHz<125 MHz<250 MHz<250 MHz<250 MHz<125 MHz<250 MHz<250 MHz
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
<20 nA<20 nA<20 nA(not set)(not set)(not set)<20 nA(not set)(not set)(not set)(not set)<20 nA(not set)(not set)(not set)(not set)<20 nA(not set)