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| Parameter | BCW32,215 | BCW32,235 | BCW32LT1G | BCW32T116 | |
|---|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |||
Manufacturer | Manufacturer | NXP Semiconductors | NXP Semiconductors | ON Semiconductor | Rohm Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Continuous collector current | IC | <100 mA | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <32 V | |||
Constant power dissipated on the transistor collector | PC | <250 mW | <250 mW | <225 mW | <350 mW |
Static current transfer coefficient of bipolar transistor | hFE | >330Ic, Vce = 10µA, 5V | >330Ic, Vce = 10µA, 5V | >200Ic, Vce = 2mA, 5V | >200Ic, Vce = 2mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <250 mVIb, Ic = 500µA, 10mA | |||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <100 MHz | <100 MHz | <200 MHz | <200 MHz |
Bipolar transistor structure | Structure | NPN | |||