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| Parameter | BCV46,215 | BCV46E6327 | BCV46TA | BCV46TC | |
|---|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SOT-23 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Manufacturer | Manufacturer | NXP Semiconductors | Infineon Technologies | Diodes/Zetex | Diodes/Zetex |
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Continuous collector current | IC | <500 mA | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <60 V | |||
Constant power dissipated on the transistor collector | PC | <250 mW | <360 mW | <330 mW | <330 mW |
Static current transfer coefficient of bipolar transistor | hFE | >4000Ic, Vce = 1mA, 5V | >2000Ic, Vce = 100µA, 1V | >4000Ic, Vce = 10mA, 5V | >4000Ic, Vce = 10mA, 5V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <1 VIb, Ic = 100µA, 100mA | |||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <220 MHz | <200 MHz | <200 MHz | <200 MHz |
Bipolar transistor structure | Structure | PNP Darlington | |||