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| Parameter | BCV26,215 | BCV26,235 | BCV26E6327 | |
|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23 |
Manufacturer | Manufacturer | NXP Semiconductors | NXP Semiconductors | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Continuous collector current | IC | <500 mA | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <30 V | ||
Constant power dissipated on the transistor collector | PC | <250 mW | <250 mW | <360 mW |
Static current transfer coefficient of bipolar transistor | hFE | >4000Ic, Vce = 1mA, 5V | >4000Ic, Vce = 1mA, 5V | >4000Ic, Vce = 100µA, 1V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <1 VIb, Ic = 100µA, 100mA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <220 MHz | <220 MHz | <200 MHz |
Bipolar transistor structure | Structure | PNP Darlington | ||