BCP53-10,135

BCP53, BCP53-10,115, BCP53-10,135, BCP53-10E6327, BCP53-10T1, BCP53-10T1G, BCP53,115, BCP53-16,115, BCP53-16,135, BCP53-16E6327, BCP53-16E6433, BCP53-16T1, BCP53-16T1G, BCP53-16T3G, BCP53T1, BCP53T1G, BCP53TA

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Description

Parameters

ParameterBCP53-10,115BCP53-10,135BCP53-10E6327BCP53-10T1BCP53-10T1GBCP53,115BCP53-16,115BCP53-16,135BCP53-16E6327BCP53-16E6433BCP53-16T1BCP53-16T1GBCP53-16T3GBCP53T1BCP53T1GBCP53TA
IC package
Package
SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsInfineon TechnologiesON SemiconductorON SemiconductorNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsInfineon TechnologiesInfineon TechnologiesON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorDiodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<1 A<1 A<1 A<1.5 A<1.5 A<1 A<1 A<1 A<1 A<1 A<1.5 A<1.5 A<1.5 A<1.5 A<1.5 A<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V
Constant power dissipated on the transistor collector
PC
<650 mW<650 mW<1.5 W<1.5 W<1.5 W<1.3 W<650 mW<650 mW<1.5 W<1.5 W<1.5 W<1.5 W<1.5 W<1.5 W<1.5 W<2 W
Static current transfer coefficient of bipolar transistor
hFE
>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<145 MHz<145 MHz<125 MHz<50 MHz<50 MHz<145 MHz<145 MHz<145 MHz<125 MHz<125 MHz<50 MHz<50 MHz<50 MHz<50 MHz<50 MHz<125 MHz
Bipolar transistor structure
Structure
PNP