BC860

BC860, BC860AMTF, BC860B,215, BC860B,235, BC860BE6327, BC860BFE6327, BC860BMTF, BC860BW,115, BC860BW,135, BC860BWE6327, BC860C,215, BC860C,235, BC860CB5003, BC860CW,115, BC860CW,135, BC860CWE6327

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		BC860AMTF	BC860B,215	BC860B,235	BC860BE6327	BC860BFE6327	BC860BMTF	BC860BW,115	BC860BW,135	BC860BWE6327	BC860C,215	BC860C,235	BC860CB5003	BC860CW,115	BC860CW,135	BC860CWE6327
IC package	Package	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	TSFP-3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-323	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-323
Manufacturer	Manufacturer	Fairchild Semiconductor	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	Infineon Technologies	Fairchild Semiconductor	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	NXP Semiconductors	NXP Semiconductors	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<45 V
Constant power dissipated on the transistor collector	P_C	<310 mW	<250 mW	<250 mW	<330 mW	<330 mW	<310 mW	<200 mW	<200 mW	<250 mW	<250 mW	<250 mW	<330 mW	<200 mW	<200 mW	<250 mW
Static current transfer coefficient of bipolar transistor	hFE	>110Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>250Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>200Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>250Ic, Vce = 10µA, 5V	>420Ic, Vce = 2mA, 6V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<150 MHz	<100 MHz	<100 MHz	<250 MHz	<250 MHz	<150 MHz	<100 MHz	<100 MHz	<250 MHz	<100 MHz	<100 MHz	<250 MHz	<100 MHz	<100 MHz	<250 MHz
Bipolar transistor structure	Structure	PNP