BC859B,215

BC859, BC859AMTF, BC859B,215, BC859BLT1, BC859BLT1G, BC859BLT3G, BC859BMTF, BC859BW,115, BC859BW,135, BC859C,215, BC859C,235, BC859CE6327, BC859CLT1, BC859CLT1G, BC859CMTF, BC859CW,115, BC859CW,135

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Description

Parameters

ParameterBC859AMTFBC859B,215BC859BLT1BC859BLT1GBC859BLT3GBC859BMTFBC859BW,115BC859BW,135BC859C,215BC859C,235BC859CE6327BC859CLT1BC859CLT1GBC859CMTFBC859CW,115BC859CW,135
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SC-70-3, SOT-323-3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SC-70-3, SOT-323-3
Manufacturer
Manufacturer
Fairchild SemiconductorNXP SemiconductorsON SemiconductorON SemiconductorON SemiconductorFairchild SemiconductorNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsInfineon TechnologiesON SemiconductorON SemiconductorFairchild SemiconductorNXP SemiconductorsNXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<30 V
Constant power dissipated on the transistor collector
PC
<310 mW<250 mW<225 mW<225 mW<225 mW<310 mW<250 mW<250 mW<250 mW<250 mW<330 mW<225 mW<225 mW<310 mW<200 mW<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>110Ic, Vce = 2mA, 5V>220Ic, Vce = 2mA, 5V>220Ic, Vce = 2mA, 5V>220Ic, Vce = 2mA, 5V>220Ic, Vce = 2mA, 5V>200Ic, Vce = 2mA, 5V>220Ic, Vce = 2mA, 5V>220Ic, Vce = 2mA, 5V>420Ic, Vce = 2mA, 5V>420Ic, Vce = 2mA, 5V>480Ic, Vce = 10µA, 5V>420Ic, Vce = 2mA, 5V>420Ic, Vce = 2mA, 5V>420Ic, Vce = 2mA, 5V>420Ic, Vce = 2mA, 5V>420Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<650 mVIb, Ic = 5mA, 100mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<650 mVIb, Ic = 5mA, 100mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA<650 mVIb, Ic = 5mA, 100mA<300 mVIb, Ic = 500µA, 10mA<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz<100 MHz<100 MHz<100 MHz<100 MHz<150 MHz<100 MHz<100 MHz<100 MHz<100 MHz<250 MHz<100 MHz<100 MHz<150 MHz<100 MHz<100 MHz
Bipolar transistor structure
Structure
PNP