BC858AE6327

BC858, BC858A-7-F, BC858AE6327, BC858ALT1, BC858ALT1G, BC858AMTF, BC858AW-7-F, BC858AWT1, BC858AWT1G, BC858B,215, BC858B,235, BC858B-7-F, BC858BE6327, BC858BE6433, BC858BL3E6327, BC858BLT1G, BC858BLT3G, BC858BMTF, BC858BT116, BC858BW-7-F, BC858BWE6327, BC858BWT1, BC858BWT106, BC858BWT1G, BC858C, BC858C-7-F, BC858CE6327, BC858CE6433, BC858CLT1, BC858CLT1G, BC858CLT3G, BC858CMTF, BC858CW-7-F, BC858CWE6327, BC858W,115, BC858W,135

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Description

Parameters

Parameter		BC858A-7-F	BC858AE6327	BC858ALT1	BC858ALT1G	BC858AMTF	BC858AW-7-F	BC858AWT1	BC858AWT1G	BC858B,215	BC858B,235	BC858B-7-F	BC858BE6327	BC858BE6433	BC858BL3E6327	BC858BLT1G	BC858BLT3G	BC858BMTF	BC858BT116	BC858BW-7-F	BC858BWE6327	BC858BWT1	BC858BWT106	BC858BWT1G	BC858C	BC858C-7-F	BC858CE6327	BC858CE6433	BC858CLT1	BC858CLT1G	BC858CLT3G	BC858CMTF	BC858CW-7-F	BC858CWE6327	BC858W,115	BC858W,135
IC package	Package	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SC-70-3, SOT-323-3	SOT-323	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SC-70-3, SOT-323-3	SOT-323	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3
Manufacturer	Manufacturer	Diodes Inc	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Diodes Inc	ON Semiconductor	ON Semiconductor	NXP Semiconductors	NXP Semiconductors	Diodes Inc	Infineon Technologies	Infineon Technologies	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Rohm Semiconductor	Diodes Inc	Infineon Technologies	ON Semiconductor	Rohm Semiconductor	ON Semiconductor	Fairchild Semiconductor	Diodes Inc	Infineon Technologies	Infineon Technologies	ON Semiconductor	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Diodes Inc	Infineon Technologies	NXP Semiconductors	NXP Semiconductors
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<30 V
Constant power dissipated on the transistor collector	P_C	<300 mW	<330 mW	<225 mW	<225 mW	<310 mW	<200 mW	<225 mW	<225 mW	<250 mW	<250 mW	<300 mW	<330 mW	<330 mW	<330 mW	<225 mW	<225 mW	<310 mW	<200 mW	<200 mW	<250 mW	<225 mW	<200 mW	<225 mW	<310 mW	<300 mW	<330 mW	<330 mW	<225 mW	<225 mW	<225 mW	<310 mW	<200 mW	<250 mW	<200 mW	<200 mW
Static current transfer coefficient of bipolar transistor	hFE	>125Ic, Vce = 2mA, 5V	>140Ic, Vce = 10µA, 5V	>125Ic, Vce = 2mA, 5V	>125Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>125Ic, Vce = 2mA, 5V	>125Ic, Vce = 2mA, 5V	>125Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>250Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>220Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>210Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>250Ic, Vce = 10µA, 5V	>220Ic, Vce = 2mA, 5V	>210Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V	>480Ic, Vce = 10µA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V	>125Ic, Vce = 2mA, 5V	>125Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<200 MHz	<250 MHz	<100 MHz	<100 MHz	<150 MHz	<200 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<200 MHz	<250 MHz	<250 MHz	<250 MHz	<100 MHz	<100 MHz	<150 MHz	<250 MHz	<200 MHz	<250 MHz	<100 MHz	<250 MHz	<100 MHz	<150 MHz	<200 MHz	<250 MHz	<250 MHz	<100 MHz	<100 MHz	<100 MHz	<150 MHz	<200 MHz	<250 MHz	<100 MHz	<100 MHz
Bipolar transistor structure	Structure	PNP
Collector cutoff current	I_frc	<15 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<15 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<15 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)