BC850

BC850, BC850AMTF, BC850B,215, BC850B,235, BC850BB5003, BC850BE6327, BC850BFE6327, BC850BLT1, BC850BLT1G, BC850BMTF, BC850BW,115, BC850BW,135, BC850BWE6327, BC850C,215, BC850C,235, BC850CB5003, BC850CE6327, BC850CLT1, BC850CLT1G, BC850CMTF, BC850CW,115, BC850CW,135, BC850CWE6327

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		BC850AMTF	BC850B,215	BC850B,235	BC850BB5003	BC850BE6327	BC850BFE6327	BC850BLT1	BC850BLT1G	BC850BMTF	BC850BW,115	BC850BW,135	BC850BWE6327	BC850C,215	BC850C,235	BC850CB5003	BC850CE6327	BC850CLT1	BC850CLT1G	BC850CMTF	BC850CW,115	BC850CW,135	BC850CWE6327
IC package	Package	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-323	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-323
Manufacturer	Manufacturer	Fairchild Semiconductor	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	Infineon Technologies	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	NXP Semiconductors	NXP Semiconductors	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<45 V
Constant power dissipated on the transistor collector	P_C	<310 mW	<250 mW	<250 mW	<330 mW	<330 mW	<250 mW	<225 mW	<225 mW	<310 mW	<200 mW	<200 mW	<250 mW	<250 mW	<250 mW	<330 mW	<330 mW	<225 mW	<225 mW	<310 mW	<200 mW	<200 mW	<250 mW
Static current transfer coefficient of bipolar transistor	hFE	>110Ic, Vce = 2mA, 5V	>240Ic, Vce = 10µA, 5V	>240Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>250Ic, Vce = 10µA, 5V	>450Ic, Vce = 10µA, 5V	>450Ic, Vce = 10µA, 5V	>480Ic, Vce = 10µA, 5V	>480Ic, Vce = 10µA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<200 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<300 MHz	<100 MHz	<100 MHz	<250 MHz	<250 MHz	<250 MHz	<100 MHz	<100 MHz	<300 MHz	<100 MHz	<100 MHz	<250 MHz	<100 MHz	<100 MHz	<250 MHz	<250 MHz	<100 MHz	<100 MHz	<300 MHz	<100 MHz	<100 MHz	<250 MHz
Bipolar transistor structure	Structure	NPN