BC849B-TP

BC849, BC849AMTF, BC849B,215, BC849B,235, BC849BE6327, BC849BLT1, BC849BLT1G, BC849BLT3, BC849BLT3G, BC849BMTF, BC849B-TP, BC849BW,115, BC849BW,135, BC849C,215, BC849C,235, BC849CE6327, BC849CLT1, BC849CLT1G, BC849CMTF, BC849C-TP, BC849CW,115, BC849CW,135, BC849CWE6327

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Description

Parameters

Parameter		BC849AMTF	BC849B,215	BC849B,235	BC849BE6327	BC849BLT1	BC849BLT1G	BC849BLT3	BC849BLT3G	BC849BMTF	BC849B-TP	BC849BW,115	BC849BW,135	BC849C,215	BC849C,235	BC849CE6327	BC849CLT1	BC849CLT1G	BC849CMTF	BC849C-TP	BC849CW,115	BC849CW,135	BC849CWE6327
IC package	Package	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-323
Manufacturer	Manufacturer	Fairchild Semiconductor	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Micro Commercial Co	NXP Semiconductors	NXP Semiconductors	NXP Semiconductors	NXP Semiconductors	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Micro Commercial Co	NXP Semiconductors	NXP Semiconductors	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<30 V
Constant power dissipated on the transistor collector	P_C	<310 mW	<250 mW	<250 mW	<330 mW	<225 mW	<225 mW	<225 mW	<225 mW	<310 mW	<225 mW	<200 mW	<200 mW	<250 mW	<250 mW	<330 mW	<225 mW	<225 mW	<310 mW	<225 mW	<200 mW	<200 mW	<250 mW
Static current transfer coefficient of bipolar transistor	hFE	>110Ic, Vce = 2mA, 5V	>240Ic, Vce = 10µA, 5V	>240Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>450Ic, Vce = 10µA, 5V	>450Ic, Vce = 10µA, 5V	>480Ic, Vce = 10µA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<200 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 5mA, 100mA	<500 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 5mA, 100mA	<500 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<300 MHz	<100 MHz	<100 MHz	<250 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<300 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<250 MHz	<100 MHz	<100 MHz	<300 MHz	<100 MHz	<100 MHz	<100 MHz	<250 MHz
Bipolar transistor structure	Structure	NPN
Collector cutoff current	I_frc	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<100 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<100 nA	(not set)	(not set)	(not set)