BC848A-TP

BC848, BC848A-7-F, BC848AE6327, BC848ALT1, BC848ALT1G, BC848AMTF, BC848A-TP, BC848AW-7-F, BC848B,215, BC848B,235, BC848B-7-F, BC848BE6327, BC848BE6433, BC848BL3E6327, BC848BLT1, BC848BLT1G, BC848BLT3G, BC848BMTF, BC848BT116, BC848B-TP, BC848BW-7-F, BC848BWE6327, BC848BWT1, BC848BWT106, BC848BWT1G, BC848C-7-F, BC848CB6327, BC848CE6327, BC848CE6433, BC848CLT1, BC848CLT1G, BC848CMTF, BC848CT116, BC848C-TP, BC848CW-7-F, BC848CWE6327, BC848CWT1G, BC848W,115, BC848W,135

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Description

Parameters

Parameter		BC848A-7-F	BC848AE6327	BC848ALT1	BC848ALT1G	BC848AMTF	BC848A-TP	BC848AW-7-F	BC848B,215	BC848B,235	BC848B-7-F	BC848BE6327	BC848BE6433	BC848BL3E6327	BC848BLT1	BC848BLT1G	BC848BLT3G	BC848BMTF	BC848BT116	BC848B-TP	BC848BW-7-F	BC848BWE6327	BC848BWT1	BC848BWT106	BC848BWT1G	BC848C-7-F	BC848CB6327	BC848CE6327	BC848CE6433	BC848CLT1	BC848CLT1G	BC848CMTF	BC848CT116	BC848C-TP	BC848CW-7-F	BC848CWE6327	BC848CWT1G	BC848W,115	BC848W,135
IC package	Package	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SC-70-3, SOT-323-3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SC-70-3, SOT-323-3	SOT-323	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SOT-23-3	SOT-23	SOT-23	SOT-23	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	SOT-23	SC-70-3, SOT-323-3	SOT-323	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3	SC-70-3, SOT-323-3
Manufacturer	Manufacturer	Diodes Inc	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Micro Commercial Co	Diodes Inc	NXP Semiconductors	NXP Semiconductors	Diodes Inc	Infineon Technologies	Infineon Technologies	Infineon Technologies	ON Semiconductor	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Rohm Semiconductor	Micro Commercial Co	Diodes Inc	Infineon Technologies	ON Semiconductor	Rohm Semiconductor	ON Semiconductor	Diodes Inc	Infineon Technologies	Infineon Technologies	Infineon Technologies	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Rohm Semiconductor	Micro Commercial Co	Diodes Inc	Infineon Technologies	ON Semiconductor	NXP Semiconductors	NXP Semiconductors
Type of mounting a component on a board/circuit	Mount	Surface mount
Continuous collector current	I_C	<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<30 V
Constant power dissipated on the transistor collector	P_C	<300 mW	<330 mW	<225 mW	<225 mW	<310 mW	<225 mW	<200 mW	<250 mW	<250 mW	<300 mW	<330 mW	<330 mW	<330 mW	<225 mW	<225 mW	<225 mW	<310 mW	<350 mW	<225 mW	<200 mW	<250 mW	<225 mW	<200 mW	<225 mW	<300 mW	<330 mW	<330 mW	<330 mW	<225 mW	<225 mW	<310 mW	<350 mW	<225 mW	<200 mW	<250 mW	<225 mW	<200 mW	<200 mW
Static current transfer coefficient of bipolar transistor	hFE	>220Ic, Vce = 2mA, 5V	>140Ic, Vce = 10µA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>330Ic, Vce = 2mA, 5V	>250Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>250Ic, Vce = 10µA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>250Ic, Vce = 10µA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V	>480Ic, Vce = 10µA, 5V	>480Ic, Vce = 10µA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>480Ic, Vce = 10µA, 5V	>420Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<600 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 5mA, 100mA	<500 mVIb, Ic = 5mA, 100mA	<600 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<90 mVIb, Ic = 500µA, 10mA	<600 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<500 mVIb, Ic = 5mA, 100mA	<600 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<600 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<600 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<200 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<500 mVIb, Ic = 5mA, 100mA	<600 mVIb, Ic = 5mA, 100mA	<250 mVIb, Ic = 500µA, 10mA	<250 mVIb, Ic = 500µA, 10mA	<90 mVIb, Ic = 500µA, 10mA	<90 mVIb, Ic = 500µA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<300 MHz	<250 MHz	<100 MHz	<100 MHz	<300 MHz	<100 MHz	<300 MHz	<100 MHz	<100 MHz	<300 MHz	<250 MHz	<250 MHz	<250 MHz	<100 MHz	<100 MHz	<100 MHz	<300 MHz	<200 MHz	<100 MHz	<300 MHz	<250 MHz	<100 MHz	<200 MHz	<100 MHz	<300 MHz	<250 MHz	<250 MHz	<250 MHz	<100 MHz	<100 MHz	<300 MHz	<200 MHz	<100 MHz	<300 MHz	<250 MHz	<100 MHz	<100 MHz	<100 MHz
Bipolar transistor structure	Structure	NPN
Collector cutoff current	I_frc	<15 nA	(not set)	(not set)	(not set)	(not set)	<100 nA	(not set)	(not set)	(not set)	<15 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<100 nA	(not set)	(not set)	(not set)	(not set)	(not set)	<15 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<100 nA	(not set)	(not set)	(not set)	(not set)	(not set)