BC808-25E6433

BC808, BC808-25E6327, BC808-25E6433, BC808-25LT1, BC808-25LT1G, BC808-25WE6327, BC808-40B6327, BC808-40E6327, BC808-40LT1, BC808-40LT1G, BC808-40WE6327

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Description

Parameters

ParameterBC808-25E6327BC808-25E6433BC808-25LT1BC808-25LT1GBC808-25WE6327BC808-40B6327BC808-40E6327BC808-40LT1BC808-40LT1GBC808-40WE6327
IC package
Package
SOT-23SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-323SOT-23SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-323
Manufacturer
Manufacturer
Infineon TechnologiesInfineon TechnologiesON SemiconductorON SemiconductorInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesON SemiconductorON SemiconductorInfineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA<500 mA<500 mA<500 mA<500 mA<500 mA<500 mA<500 mA<500 mA<200 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<25 V
Constant power dissipated on the transistor collector
PC
<330 mW<330 mW<225 mW<225 mW<250 mW<330 mW<330 mW<225 mW<225 mW<250 mW
Static current transfer coefficient of bipolar transistor
hFE
>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<700 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz<200 MHz<100 MHz<100 MHz<200 MHz<200 MHz<200 MHz<100 MHz<100 MHz<200 MHz
Bipolar transistor structure
Structure
PNP