BC640

BC640, BC640-016G, BC640,112, BC640,116, BC640,126, BC640BU, BC640G, BC640_J35Z, BC640_J61Z, BC640TA, BC640TAR, BC640TF, BC640TFR, BC640ZL1, BC640ZL1G

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Description

Parameters

ParameterBC640-016GBC640,112BC640,116BC640,126BC640BUBC640GBC640_J35ZBC640_J61ZBC640TABC640TARBC640TFBC640TFRBC640ZL1BC640ZL1G
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
ON SemiconductorNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsFairchild SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<500 mA<1 A<1 A<1 A<1 A<500 mA<1 A<1 A<1 A<1 A<1 A<1 A<500 mA<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V
Constant power dissipated on the transistor collector
PC
<625 mW<830 mW<830 mW<830 mW<1 W<625 mW<1 W<1 W<1 W<1 W<1 W<1 W<625 mW<625 mW
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 5mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 5mA, 2V>40Ic, Vce = 5mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz<145 MHz<145 MHz<145 MHz<100 MHz<150 MHz<100 MHz<100 MHz<100 MHz<100 MHz<100 MHz<100 MHz<150 MHz<150 MHz
Bipolar transistor structure
Structure
PNP