BC639_D27Z

BC639, BC639,112, BC639,116, BC639,126, BC639-16ZL1, BC639-16ZL1G, BC639_D26Z, BC639_D27Z, BC639_D74Z, BC639_D75Z, BC639_D81Z, BC639G, BC639_J35Z, BC639_L34Z, BC639RL1, BC639RL1G, BC639ZL1, BC639ZL1G

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Description

Parameters

ParameterBC639,112BC639,116BC639,126BC639-16ZL1BC639-16ZL1GBC639_D26ZBC639_D27ZBC639_D74ZBC639_D75ZBC639_D81ZBC639GBC639_J35ZBC639_L34ZBC639RL1BC639RL1GBC639ZL1BC639ZL1G
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsNXP SemiconductorsON SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V
Constant power dissipated on the transistor collector
PC
<830 mW<830 mW<830 mW<625 mW<800 mW<1 W<1 W<1 W<1 W<1 W<1 W<1 W<1 W<625 mW<800 mW<625 mW<800 mW
Static current transfer coefficient of bipolar transistor
hFE
>63Ic, Vce = 5mA, 2V>63Ic, Vce = 5mA, 2V>63Ic, Vce = 5mA, 2V>100Ic, Vce = 150mA, 2V>100Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<180 MHz<180 MHz<180 MHz<200 MHz<200 MHz<100 MHz<100 MHz<100 MHz<100 MHz<100 MHz<200 MHz<100 MHz<100 MHz<200 MHz<200 MHz<200 MHz<200 MHz
Bipolar transistor structure
Structure
NPN