BC638,116

BC638, BC638,112, BC638,116, BC638,126, BC638BU, BC638G, BC638TA, BC638TF, BC638TFR, BC638ZL1, BC638ZL1G

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterBC638,112BC638,116BC638,126BC638BUBC638GBC638TABC638TFBC638TFRBC638ZL1BC638ZL1G
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsNXP SemiconductorsFairchild SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<1 A<1 A<1 A<1 A<500 mA<1 A<1 A<1 A<500 mA<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<830 mW<830 mW<830 mW<1 W<625 mW<1 W<1 W<1 W<625 mW<625 mW
Static current transfer coefficient of bipolar transistor
hFE
>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>63Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V>40Ic, Vce = 150mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<500 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz<100 MHz<100 MHz<100 MHz<150 MHz<100 MHz<100 MHz<100 MHz<150 MHz<150 MHz
Bipolar transistor structure
Structure
PNP