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| Parameter | BC636,116 | BC636BU | BC636_J35Z | BC636TA | BC636TAR | BC636TF | BC636TFR | |
|---|---|---|---|---|---|---|---|---|
IC package | Package | TO-92-3 (Standard Body), TO-226 | ||||||
Manufacturer | Manufacturer | NXP Semiconductors | ||||||
Type of mounting a component on a board/circuit | Mount | Through-hole | ||||||
Continuous collector current | IC | <1 A | ||||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <45 V | ||||||
Constant power dissipated on the transistor collector | PC | <830 mW | <1 W | <1 W | <1 W | <1 W | <1 W | <1 W |
Static current transfer coefficient of bipolar transistor | hFE | >63Ic, Vce = 150mA, 2V | >40Ic, Vce = 150mA, 2V | >40Ic, Vce = 150mA, 2V | >40Ic, Vce = 150mA, 2V | >40Ic, Vce = 150mA, 2V | >40Ic, Vce = 150mA, 2V | >40Ic, Vce = 150mA, 2V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <500 mVIb, Ic = 50mA, 500mA | ||||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <180 MHz | <100 MHz | <100 MHz | <100 MHz | <100 MHz | <100 MHz | <100 MHz |
Bipolar transistor structure | Structure | PNP | ||||||