BC635_D26Z

BC635, BC635,112, BC635,116, BC635-16,126, BC635_D26Z, BC635_D27Z, BC635_D75Z, BC635_J35Z, BC635_L34Z, BC635RL1, BC635RL1G, BC635ZL1, BC635ZL1G

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Description

Parameters

Parameter		BC635,112	BC635,116	BC635-16,126	BC635_D26Z	BC635_D27Z	BC635_D75Z	BC635_J35Z	BC635_L34Z	BC635RL1	BC635RL1G	BC635ZL1	BC635ZL1G
IC package	Package	TO-92-3 (Standard Body), TO-226
Manufacturer	Manufacturer	NXP Semiconductors	NXP Semiconductors	NXP Semiconductors	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Continuous collector current	I_C	<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<45 V
Constant power dissipated on the transistor collector	P_C	<830 mW	<830 mW	<830 mW	<1 W	<1 W	<1 W	<1 W	<1 W	<625 mW	<625 mW	<625 mW	<625 mW
Static current transfer coefficient of bipolar transistor	hFE	>63Ic, Vce = 150mA, 2V	>63Ic, Vce = 150mA, 2V	>63Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V	>40Ic, Vce = 150mA, 2V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<500 mVIb, Ic = 50mA, 500mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<180 MHz	<180 MHz	<180 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<200 MHz	<200 MHz	<200 MHz	<200 MHz
Bipolar transistor structure	Structure	NPN