BC559_J35Z

BC559, BC559ABU, BC559ATA, BC559B, BC559BBU, BC559B_J35Z, BC559BTA, BC559BTAR, BC559BU, BC559C,116, BC559CBU, BC559CTA, BC559_J35Z

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Description

Parameters

Parameter		BC559ABU	BC559ATA	BC559B	BC559BBU	BC559B_J35Z	BC559BTA	BC559BTAR	BC559BU	BC559C,116	BC559CBU	BC559CTA	BC559_J35Z
IC package	Package	TO-92-3 (Standard Body), TO-226
Manufacturer	Manufacturer	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	NXP Semiconductors	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Continuous collector current	I_C	<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<30 V
Constant power dissipated on the transistor collector	P_C	<500 mW
Static current transfer coefficient of bipolar transistor	hFE	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<100 MHz	<150 MHz	<150 MHz	<150 MHz
Bipolar transistor structure	Structure	PNP