BC556_J35Z

BC556, BC556A,112, BC556ABU, BC556ATA, BC556B, BC556B,112, BC556B,116, BC556BBU, BC556BG, BC556B_J18Z, BC556B_J35Z, BC556BTA, BC556BTAR, BC556BTF, BC556BTFR, BC556BU, BC556BZL1, BC556BZL1G, BC556CBU, BC556CTA, BC556_J18Z, BC556_J35Z, BC556TF, BC556TFR

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Description

Parameters

Parameter		BC556A,112	BC556ABU	BC556ATA	BC556B	BC556B,112	BC556B,116	BC556BBU	BC556BG	BC556B_J18Z	BC556B_J35Z	BC556BTA	BC556BTAR	BC556BTF	BC556BTFR	BC556BU	BC556BZL1	BC556BZL1G	BC556CBU	BC556CTA	BC556_J18Z	BC556_J35Z	BC556TF	BC556TFR
IC package	Package	TO-92-3 (Standard Body), TO-226
Manufacturer	Manufacturer	NXP Semiconductors	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	NXP Semiconductors	NXP Semiconductors	Fairchild Semiconductor	ON Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Continuous collector current	I_C	<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<65 V
Constant power dissipated on the transistor collector	P_C	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW	<625 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW	<625 mW	<625 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW	<500 mW
Static current transfer coefficient of bipolar transistor	hFE	>125Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>220Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>180Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>200Ic, Vce = 2mA, 5V	>180Ic, Vce = 2mA, 5V	>180Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>420Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V	>110Ic, Vce = 2mA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<300 mVIb, Ic = 500µA, 10mA	<300 mVIb, Ic = 500µA, 10mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA	<650 mVIb, Ic = 5mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<100 MHz	<150 MHz	<150 MHz	<150 MHz	<100 MHz	<100 MHz	<150 MHz	<280 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<280 MHz	<280 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz	<150 MHz
Bipolar transistor structure	Structure	PNP
Collector cutoff current	I_frc	(not set)	(not set)	(not set)	<100 nA	(not set)	(not set)	(not set)	<100 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)	<100 nA	<100 nA	(not set)	(not set)	(not set)	(not set)	(not set)	(not set)