BC517

BC517, BC517,112, BC517,116, BC517_D26Z, BC517_D27Z, BC517_D74Z, BC517_D75Z, BC517G, BC517_J35Z, BC517_L34Z, BC517RL1, BC517RL1G, BC517ZL1, BC517ZL1G

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Description

Parameters

ParameterBC517,112BC517,116BC517_D26ZBC517_D27ZBC517_D74ZBC517_D75ZBC517GBC517_J35ZBC517_L34ZBC517RL1BC517RL1GBC517ZL1BC517ZL1G
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<500 mA<500 mA<1.2 A<1.2 A<1.2 A<1.2 A<1 A<1.2 A<1.2 A<1 A<1 A<1 A<1 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<30 V
Constant power dissipated on the transistor collector
PC
<625 mW
Static current transfer coefficient of bipolar transistor
hFE
>30000Ic, Vce = 20mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1 VIb, Ic = 100µA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<220 MHz<220 MHz<200 MHz<200 MHz<200 MHz<200 MHz<200 MHz<200 MHz<200 MHz<200 MHz<200 MHz<200 MHz<200 MHz
Bipolar transistor structure
Structure
NPN Darlington
Collector cutoff current
Ifrc
<500 nA