50A02MH

50A02MH, 50A02MH-TL-E

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Description

Parameters

Parameter50A02MH-TL-E
Manufacturer
Manufacturer
SANYO Semiconductor (U.S.A) Co
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<600 mW
Static current transfer coefficient of bipolar transistor
hFE
>200Ic, Vce = 10mA, 2V
Saturation voltage between collector and emitter of transistor
UCE-sat
<120 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<690 MHz
Bipolar transistor structure
Structure
PNP