2SC4617G

2SC4617, 2SC4617G, 2SC4617T1, 2SC4617T1G, 2SC4617TLQ, 2SC4617TLR, 2SC4617TLS

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Description

Parameters

Parameter2SC4617G2SC4617T12SC4617T1G2SC4617TLQ2SC4617TLR2SC4617TLS
IC package
Package
SC-75-3, SOT-416, EMT3, 3-SSMini
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorON SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA<100 mA<100 mA<150 mA<150 mA<150 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<125 mW<125 mW<125 mW<150 mW<150 mW<150 mW
Static current transfer coefficient of bipolar transistor
hFE
>120Ic, Vce = 1mA, 6V>120Ic, Vce = 1mA, 6V>120Ic, Vce = 1mA, 6V>120Ic, Vce = 1mA, 6V>180Ic, Vce = 1mA, 6V>270Ic, Vce = 1mA, 6V
Saturation voltage between collector and emitter of transistor
UCE-sat
<400 mVIb, Ic = 5mA, 60mA<400 mVIb, Ic = 5mA, 60mA<400 mVIb, Ic = 5mA, 60mA<400 mVIb, Ic = 5mA, 50mA<400 mVIb, Ic = 5mA, 50mA<400 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<180 MHz
Bipolar transistor structure
Structure
NPN
Collector cutoff current
Ifrc
<500 nA