2SA1962

2SA1962, 2SA1962-O, 2SA1962-O(Q), 2SA1962OTU, 2SA1962RTU

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Description

Parameters

Parameter2SA1962-O2SA1962-O(Q)2SA1962OTU2SA1962RTU
IC package
Package
2-16C1A (TO-247 N)2-16C1A (TO-247 N)TO-3PTO-3P
Manufacturer
Manufacturer
ToshibaToshibaFairchild SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<15 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<230 V
Constant power dissipated on the transistor collector
PC
<130 W
Static current transfer coefficient of bipolar transistor
hFE
>80Ic, Vce = 1A, 5V>80Ic, Vce = 1A, 5V>80Ic, Vce = 1A, 5V>55Ic, Vce = 1A, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<3 VIb, Ic = 800mA, 8A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<30 MHz
Bipolar transistor structure
Structure
PNP