2SA1407

2SA1407, 2SA1407E

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Description

Parameters

Parameter2SA1407E
Manufacturer
Manufacturer
SANYO Semiconductor (U.S.A) Co
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<150 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<200 V
Constant power dissipated on the transistor collector
PC
<1.2 W
Static current transfer coefficient of bipolar transistor
hFE
>100Ic, Vce = 10mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<800 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<400 MHz
Bipolar transistor structure
Structure
PNP