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| Parameter | 2SA1162-GR(T5L,F,T) | 2SA1162GT1 | 2SA1162YT1 | 2SA1162-Y(T5L,F,T) | |
|---|---|---|---|---|---|
IC package | Package | S-mini | SC-59-3, SMT3, SOT-346, TO-236 | SC-59-3, SMT3, SOT-346, TO-236 | S-mini |
Manufacturer | Manufacturer | Toshiba | ON Semiconductor | ON Semiconductor | Toshiba |
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Continuous collector current | IC | <150 mA | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <50 V | |||
Constant power dissipated on the transistor collector | PC | <150 mW | <200 mW | <200 mW | <150 mW |
Static current transfer coefficient of bipolar transistor | hFE | >200Ic, Vce = 2mA, 6V | >200Ic, Vce = 2mA, 6V | >120Ic, Vce = 2mA, 6V | >120Ic, Vce = 2mA, 6V |
Saturation voltage between collector and emitter of transistor | UCE-sat | <300 mVIb, Ic = 10mA, 100mA | |||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <80 MHz | |||
Bipolar transistor structure | Structure | PNP | |||
Collector cutoff current | Ifrc | (not set) | <100 nA | <100 nA | (not set) |