2PD602AQ,115

2PD602, 2PD602AQ,115, 2PD602AQL,215, 2PD602AQL,235, 2PD602AR,115, 2PD602ARL,215, 2PD602ARL,235, 2PD602AS,115, 2PD602ASL,215, 2PD602ASL,235

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Description

Parameters

Parameter2PD602AQ,1152PD602AQL,2152PD602AQL,2352PD602AR,1152PD602ARL,2152PD602ARL,2352PD602AS,1152PD602ASL,2152PD602ASL,235
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-59-3, SMT3, SOT-346, TO-236SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-59-3, SMT3, SOT-346, TO-236SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<250 mW
Static current transfer coefficient of bipolar transistor
hFE
>85Ic, Vce = 150mA, 10V>85Ic, Vce = 150mA, 10V>85Ic, Vce = 150mA, 10V>120Ic, Vce = 150mA, 10V>120Ic, Vce = 150mA, 10V>120Ic, Vce = 150mA, 10V>170Ic, Vce = 150mA, 10V>170Ic, Vce = 150mA, 10V>170Ic, Vce = 150mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<600 mVIb, Ic = 30mA, 300mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<140 MHz<140 MHz<140 MHz<160 MHz<160 MHz<160 MHz<180 MHz<180 MHz<180 MHz
Bipolar transistor structure
Structure
NPN