2PD601

2PD601, 2PD601AQ,115, 2PD601AQW,115, 2PD601AR,115, 2PD601ARL,215, 2PD601ARL,235, 2PD601ART,215, 2PD601ART,235, 2PD601ARW,115, 2PD601AS,115, 2PD601ASL,215, 2PD601ASL,235, 2PD601ASW,115

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Description

Parameters

Parameter2PD601AQ,1152PD601AQW,1152PD601AR,1152PD601ARL,2152PD601ARL,2352PD601ART,2152PD601ART,2352PD601ARW,1152PD601AS,1152PD601ASL,2152PD601ASL,2352PD601ASW,115
IC package
Package
SC-59-3, SMT3, SOT-346, TO-236SC-70-3, SOT-323-3SC-59-3, SMT3, SOT-346, TO-236SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SC-59-3, SMT3, SOT-346, TO-236SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<100 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<250 mW<200 mW<250 mW<250 mW<250 mW<250 mW<250 mW<200 mW<250 mW<250 mW<250 mW<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>160Ic, Vce = 2mA, 10V>160Ic, Vce = 2mA, 10V>210Ic, Vce = 2mA, 10V>210Ic, Vce = 2mA, 10V>210Ic, Vce = 2mA, 10V>210Ic, Vce = 2mA, 10V>210Ic, Vce = 2mA, 10V>210Ic, Vce = 2mA, 10V>290Ic, Vce = 2mA, 10V>290Ic, Vce = 2mA, 10V>290Ic, Vce = 2mA, 10V>290Ic, Vce = 2mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 10mA, 100mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz
Bipolar transistor structure
Structure
NPN