2PB1219

2PB1219, 2PB1219AQ,115, 2PB1219AQ,135, 2PB1219AR,115, 2PB1219AR,135, 2PB1219AS,115, 2PB1219AS,135

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Description

Parameters

Parameter2PB1219AQ,1152PB1219AQ,1352PB1219AR,1152PB1219AR,1352PB1219AS,1152PB1219AS,135
IC package
Package
SC-70-3, SOT-323-3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V
Constant power dissipated on the transistor collector
PC
<200 mW
Static current transfer coefficient of bipolar transistor
hFE
>85Ic, Vce = 150mA, 1V>85Ic, Vce = 150mA, 1V>120Ic, Vce = 150mA, 1V>120Ic, Vce = 150mA, 1V>170Ic, Vce = 150mA, 1V>170Ic, Vce = 150mA, 1V
Saturation voltage between collector and emitter of transistor
UCE-sat
<600 mVIb, Ic = 30mA, 300mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz<100 MHz<120 MHz<120 MHz<140 MHz<140 MHz
Bipolar transistor structure
Structure
PNP