2N6517

2N6517, 2N6517BU, 2N6517CBU, 2N6517CTA, 2N6517G, 2N6517RLRA, 2N6517RLRAG, 2N6517RLRP, 2N6517RLRPG, 2N6517TA

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Description

Parameters

Parameter2N6517BU2N6517CBU2N6517CTA2N6517G2N6517RLRA2N6517RLRAG2N6517RLRP2N6517RLRPG2N6517TA
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<350 V
Constant power dissipated on the transistor collector
PC
<625 mW<625 mW<625 mW<625 mW<1.5 W<1.5 W<1.5 W<1.5 W<625 mW
Static current transfer coefficient of bipolar transistor
hFE
>20Ic, Vce = 50mA, 10V>20Ic, Vce = 50mA, 10V>20Ic, Vce = 50mA, 10V>20Ic, Vce = 1mA, 10V>20Ic, Vce = 1mA, 10V>20Ic, Vce = 1mA, 10V>20Ic, Vce = 1mA, 10V>20Ic, Vce = 1mA, 10V>20Ic, Vce = 50mA, 10V
Saturation voltage between collector and emitter of transistor
UCE-sat
<1 VIb, Ic = 5mA, 50mA<1 VIb, Ic = 5mA, 50mA<1 VIb, Ic = 5mA, 50mA<300 mVIb, Ic = 1mA, 10mA<1 VIb, Ic = 5mA, 50mA<1 VIb, Ic = 5mA, 50mA<1 VIb, Ic = 5mA, 50mA<1 VIb, Ic = 5mA, 50mA<1 VIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Bipolar transistor structure
Structure
NPN