2N5551

2N5551, 2N5551,116, 2N5551,412, 2N5551BU, 2N5551CBU, 2N5551CTA, 2N5551CYTA, 2N5551DI, 2N5551G, 2N5551_J05Z, 2N5551_J18Z, 2N5551_J61Z, 2N5551RL1, 2N5551RL1G, 2N5551RLRA, 2N5551RLRAG, 2N5551RLRM, 2N5551RLRMG, 2N5551RLRP, 2N5551RLRPG, 2N5551TA, 2N5551TAR, 2N5551TF, 2N5551TFR, 2N5551YBU, 2N5551YTA, 2N5551ZL1, 2N5551ZL1G

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Description

Parameters

Parameter		2N5551,116	2N5551,412	2N5551BU	2N5551CBU	2N5551CTA	2N5551CYTA	2N5551DI	2N5551G	2N5551_J05Z	2N5551_J18Z	2N5551_J61Z	2N5551RL1	2N5551RL1G	2N5551RLRA	2N5551RLRAG	2N5551RLRM	2N5551RLRMG	2N5551RLRP	2N5551RLRPG	2N5551TA	2N5551TAR	2N5551TF	2N5551TFR	2N5551YBU	2N5551YTA	2N5551ZL1	2N5551ZL1G
IC package	Package	TO-92-3 (Standard Body), TO-226
Manufacturer	Manufacturer	NXP Semiconductors	NXP Semiconductors	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Diodes Inc	ON Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	ON Semiconductor	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Continuous collector current	I_C	<300 mA	<300 mA	<600 mA	<600 mA	<600 mA	<600 mA	<200 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA	<600 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<160 V
Constant power dissipated on the transistor collector	P_C	<630 mW	<630 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW	<625 mW
Static current transfer coefficient of bipolar transistor	hFE	>80Ic, Vce = 10mA, 5V
Saturation voltage between collector and emitter of transistor	U_CE-sat	<150 mVIb, Ic = 1mA, 10mA	<150 mVIb, Ic = 1mA, 10mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA	<200 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<300 MHz	<300 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<300 MHz	<300 MHz	<100 MHz	<100 MHz	<100 MHz	<300 MHz	<300 MHz	<300 MHz	<300 MHz	<300 MHz	<300 MHz	<300 MHz	<300 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<100 MHz	<300 MHz	<300 MHz
Bipolar transistor structure	Structure	NPN