2N5550_D26Z

2N5550, 2N5550BU, 2N5550_D26Z, 2N5550G, 2N5550_J24Z, 2N5550RLRA, 2N5550RLRAG, 2N5550RLRP, 2N5550RLRPG, 2N5550TA, 2N5550TAR, 2N5550TF, 2N5550TFR

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Description

Parameters

Parameter2N5550BU2N5550_D26Z2N5550G2N5550_J24Z2N5550RLRA2N5550RLRAG2N5550RLRP2N5550RLRPG2N5550TA2N5550TAR2N5550TF2N5550TFR
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Fairchild SemiconductorFairchild SemiconductorON SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<600 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<140 V
Constant power dissipated on the transistor collector
PC
<625 mW
Static current transfer coefficient of bipolar transistor
hFE
>60Ic, Vce = 10mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<250 mVIb, Ic = 5mA, 50mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<300 MHz
Bipolar transistor structure
Structure
NPN