2N5401

2N5401, 2N5401,116, 2N5401,412, 2N5401BU, 2N5401CTA, 2N5401CYTA, 2N5401_D10Z, 2N5401_D28Z, 2N5401_D81Z, 2N5401DI, 2N5401G, 2N5401_J05Z, 2N5401_J61Z, 2N5401NLBU, 2N5401RL1, 2N5401RL1G, 2N5401RLRA, 2N5401RLRAG, 2N5401RLRM, 2N5401RLRMG, 2N5401_S00Z, 2N5401TA, 2N5401TAR, 2N5401TF, 2N5401TFR, 2N5401YBU, 2N5401YTA, 2N5401ZL1, 2N5401ZL1G

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Description

Parameters

Parameter2N5401,1162N5401,4122N5401BU2N5401CTA2N5401CYTA2N5401_D10Z2N5401_D28Z2N5401_D81Z2N5401DI2N5401G2N5401_J05Z2N5401_J61Z2N5401NLBU2N5401RL12N5401RL1G2N5401RLRA2N5401RLRAG2N5401RLRM2N5401RLRMG2N5401_S00Z2N5401TA2N5401TAR2N5401TF2N5401TFR2N5401YBU2N5401YTA2N5401ZL12N5401ZL1G
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorDiodes IncON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<300 mA<300 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<200 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA<600 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<150 V
Constant power dissipated on the transistor collector
PC
<630 mW<630 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<1.5 W<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW<625 mW
Static current transfer coefficient of bipolar transistor
hFE
>60Ic, Vce = 10mA, 5V
Saturation voltage between collector and emitter of transistor
UCE-sat
<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<200 mVIb, Ic = 1mA, 10mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<500 mVIb, Ic = 5mA, 50mA<200 mVIb, Ic = 1mA, 10mA<200 mVIb, Ic = 1mA, 10mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<300 MHz<300 MHz<400 MHz<400 MHz<400 MHz<400 MHz<400 MHz<400 MHz<300 MHz<300 MHz<400 MHz<400 MHz<400 MHz<300 MHz<300 MHz<300 MHz<300 MHz<300 MHz<300 MHz<400 MHz<400 MHz<400 MHz<400 MHz<400 MHz<400 MHz<400 MHz<300 MHz<300 MHz
Bipolar transistor structure
Structure
PNP
Collector cutoff current
Ifrc
<50 nA