2DB1188Q-13

2DB1188, 2DB1188P-13, 2DB1188Q-13, 2DB1188R-13

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Description

Parameters

Parameter2DB1188P-132DB1188Q-132DB1188R-13
IC package
Package
SOT-89-3, TO-243-3
Manufacturer
Manufacturer
Diodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<2 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<32 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
>82Ic, Vce = 500mA, 3V>120Ic, Vce = 500mA, 3V>180Ic, Vce = 500mA, 3V
Saturation voltage between collector and emitter of transistor
UCE-sat
<800 mVIb, Ic = 200mA, 2A
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<120 MHz
Bipolar transistor structure
Structure
PNP