MMBFJ177

MMBFJ177, MMBFJ177LT1, MMBFJ177LT1G

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterMMBFJ177LT1MMBFJ177LT1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<225 mW
Input capacitance of field effect transistor
Ciss
<11 pFVds = 10V (VGS)
Cutoff voltage
U0
800 mVId = 10nA
Continuous drain current
IDSS
>1.5 mAmin.: Vgs=0; Vds=15V
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<300 Ω
Gate-source breakdown voltage
VBRGSS
>30 V