MMBF5457LT1G

MMBF5457, MMBF5457LT1, MMBF5457LT1G

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Description

Parameters

ParameterMMBF5457LT1MMBF5457LT1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<225 mW
Input capacitance of field effect transistor
Ciss
<7 pFVds = 15V
Cutoff voltage
U0
500 mVId = 10nA
Continuous voltage between drain and source
UDSS
<25 V
Continuous drain current
IDSS
>1 mAmin.: Vgs=0; Vds=15V
FET channel type
Channel
N-ch
Gate-source breakdown voltage
VBRGSS
>25 V