MMBF4392LT1G

MMBF4392, MMBF4392LT1, MMBF4392LT1G

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Description

Parameters

ParameterMMBF4392LT1MMBF4392LT1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<225 mW
Input capacitance of field effect transistor
Ciss
<14 pFVds = 15V
Cutoff voltage
U0
2 VId = 10nA
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
>25 mAmin.: Vgs=0; Vds=15V
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<60 Ω
Gate-source breakdown voltage
VBRGSS
>30 V