J175_D26Z

J175, J175,116, J175_D26Z, J175_D27Z, J175_D74Z, J175_D75Z

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Description

Parameters

ParameterJ175,116J175_D26ZJ175_D27ZJ175_D74ZJ175_D75Z
IC package
Package
TO-92-3 (Standard Body), TO-226, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<400 mW<350 mW<350 mW<350 mW<350 mW
Input capacitance of field effect transistor
Ciss
<8 pFVds = 10V (VGS)(not set)(not set)(not set)(not set)
Cutoff voltage
U0
3 VId = 10nA
Continuous voltage between drain and source
UDSS
<30 V(not set)(not set)(not set)(not set)
Continuous drain current
IDSS
>7 mAmin.: Vgs=0; Vds=15V
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<125 Ω
Gate-source breakdown voltage
VBRGSS
>30 V