J113_D26Z

J113, J113,126, J113_D26Z, J113_D27Z, J113_D74Z, J113_D75Z

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Description

Parameters

ParameterJ113,126J113_D26ZJ113_D27ZJ113_D74ZJ113_D75Z
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<400 mW<625 mW<625 mW<625 mW<625 mW
Input capacitance of field effect transistor
Ciss
<6 pFVds = 10V (VGS)(not set)(not set)(not set)(not set)
Cutoff voltage
U0
500 mVId = 1µA
Continuous voltage between drain and source
UDSS
<40 V(not set)(not set)(not set)(not set)
Continuous drain current
IDSS
>2 mAmin.: Vgs=0; Vds=15V
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<100 Ω
Gate-source breakdown voltage
VBRGSS
>40 V>35 V>35 V>35 V>35 V