J112_D26Z

J112, J112,126, J112_D11Z, J112_D26Z, J112_D27Z, J112_D74Z, J112G, J112RL1, J112RL1G, J112RLRA, J112RLRAG

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Description

Parameters

ParameterJ112,126J112_D11ZJ112_D26ZJ112_D27ZJ112_D74ZJ112GJ112RL1J112RL1GJ112RLRAJ112RLRAG
IC package
Package
TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
NXP SemiconductorsFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<400 mW<625 mW<625 mW<625 mW<625 mW<350 mW<350 mW<350 mW<350 mW<350 mW
Input capacitance of field effect transistor
Ciss
<6 pFVds = 10V (VGS)(not set)(not set)(not set)(not set)(not set)(not set)(not set)(not set)(not set)
Cutoff voltage
U0
1 VId = 1µA
Continuous voltage between drain and source
UDSS
<40 V(not set)(not set)(not set)(not set)(not set)(not set)(not set)(not set)(not set)
Continuous drain current
IDSS
>5 mAmin.: Vgs=0; Vds=15V
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<50 Ω
Gate-source breakdown voltage
VBRGSS
>40 V>35 V>35 V>35 V>35 V>35 V>35 V>35 V>35 V>35 V