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| Parameter | BSR58,215 | BSR58LT1G | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | NXP Semiconductors | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <250 mW | <350 mW |
Cutoff voltage | U0 | 800 mVId = 0.5nA | 800 mVId = 1µA |
Continuous voltage between drain and source | UDSS | <40 V | (not set) |
Continuous drain current | IDSS | >8 mAmin.: Vgs=0; Vds=15V | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <60 Ω | |
Gate-source breakdown voltage | VBRGSS | >40 V | |