BFT46,215

BFT46, BFT46,215

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Description

Parameters

ParameterBFT46,215
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<250 mW
Input capacitance of field effect transistor
Ciss
<5 pFVds = 10V
Cutoff voltage
U0
1.2 VId = 0.5nA
Continuous voltage between drain and source
UDSS
<25 V
Continuous drain current
IDSS
200 µA ~ 10 mAmin.: Vgs=0; Vds=10V
FET channel type
Channel
N-ch