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| Parameter | BFR30,215 | BFR30LT1 | BFR30LT1G | |
|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | ||
Manufacturer | Manufacturer | NXP Semiconductors | ON Semiconductor | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <250 mW | <225 mW | <225 mW |
Input capacitance of field effect transistor | Ciss | <4 pFVds = 10V | <5 pFVds = 10V | <5 pFVds = 10V |
Cutoff voltage | U0 | 5 VId = 0.5nA | ||
Continuous voltage between drain and source | UDSS | <25 V | ||
Continuous drain current | IDSS | 4 mA ~ 10 mAmin.: Vgs=0; Vds=10V | >4 mAmin.: Vgs=0; Vds=10V | >4 mAmin.: Vgs=0; Vds=10V |
FET channel type | Channel | N-ch | ||